2sk1529 pdf
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datasheet: 50kb/ 9p.  2sk1529 : n channel mos type ( high power amplifier applications) toshiba semiconductor.  ) zcomplementary to 2sj200 absolute maximum ratings ( ta = 25° c) characteristics symbol rating unit drain− source voltage vdss 180 v.  datasheet: 490kb/ 4p.  description: isc n- channel mosfet transistor.  part # : 2sk1529.  part # : 2sk1520.  type designator: 2sk1529.  manufacturer: hitachi semiconductor.  maximum power dissipation ( pd) : 120 w.  manufacturer: inchange semiconductor company limited.  : vdss = 180v : | yfs| = 4.  2sk1529 datasheet ( pdf) 3 page - toshiba semiconductor.  description: 2sk152.  iscn- channelmosfettransistor 2sk1529 description · drainsourcevoltage- : vdss= 180v( min) · fastswitchingspeed · minimumlot- to- lotvariationsforrobustdevice performanceandreliableoperation applications · highbreakdownvoltage absolutemaximumratings( ta= 25℃ ) symbol a rm et value unit vdss drain- sourcevoltage( vgs= 0) 180 v.  maximum drain- source voltage | vds| : 180 v.  2sk1529: description: n channel mos type ( high power amplifier 2sk1529 pdf applications) download 4 pages: scroll/ zoom: 100% : manufacturer: toshiba [ toshiba semiconductor] direct link: semicon.  manufacturer: sony corporation.  datasheet download.  type of control channel: n - channel.  description: n channel mos type ( high power amplifier application).  if the datasheet does not displayed, please, download the adobe reader or click to view in html datasheet.  high power amplifier application.  file size: 274kbytes.  high breakdown voltage high forward transfer admittance complementary to 2sj200.  datasheet: 181kb/ 3p.  2sktoshiba field effect transistor silicon n channel mos type 2sk1529 high power amplifier application high breakdown voltage : vdss = 180v high forward transfer admittance : | yfs| = 4.  2sk1529 datasheet.  file size: 490kbytes.  ) z complementary to 2sj200 absolute maximum ratings ( ta = 25° c) characteristics symbol rating unit.  manufacturer: toshiba semiconductor.  isc n- channel mosfet transistor 2sk1529 description · drain current – id= 10a@ tc= 25℃ · drain source voltage- : vdss= 180v( min) · fast switching speed · minimum lot- to- lot variations 2sk1529 pdf for robust device performance and reliable operation applications · high breakdown voltage absolute maximum ratings( ta= 25℃ ) symbol arameter value unit vdss.  file size: 183kbytes.  2sktoshiba field effect transistor silicon n channel mos type 2sk1529 high- power amplifier application zhigh breakdown voltage : v dss = 180v zhigh forward transfer admittance : | y fs| = 4.  file size: 285kbytes.  2sk1529 datasheet ( pdf) 1 page - toshiba semiconductor.  download 2sk1529 datasheet from.  type of transistor: mosfet.  2sk1529 datasheet, 2sk1529 pdf, 2sk1529 data sheet, datasheet, data sheet, pdf, toshiba, field effect transistor silicon n channel mos type high power amplifier application.  ) maximum ratings ( ta = 25° c) marking.  ) complementary to 2sj200 maximum ratings ( ta = 25° c) characteristics symbol rating unit drain− source voltage vdss 180 v.  description: n channel mos type ( high power amplifier applications).  please enter the above security code to download datasheet.  view 2sk1529 to our catalog.  similar description - 2sk1529.  2sk1529 datasheet ( pdf) download - toshiba semiconductor.  toshiba field effect transistor silicon n channel mos type.  lot number month ( starting from alphabet a).  2sktoshiba field effect transistor silicon n channel mos type 2sk1529 high- power amplifier application z high breakdown voltage : vdss = 180 v z high forward transfer admittance : | yfs| = 4.  marking code: k1529.  datasheet: 82kb/ 2p.  click to view in html datasheet.  description: high- power amplifier application.