Furthermore, fragile substrates, such as free-standing nanotubes or thin films, cannot tolerate the vigorous mechanical scrubbing procedures required to remove all residual traces of the polymer resist Here  http//enwikipediaorg/wiki/Photoresist  demonstrate several examples where e-beam lithography using an amorphous ice resist eliminates both of these difficulties and enables the fabrication of unique nanoscale device structures in a process we call ice lithography 1, 2 We demonstrate the fabrication of micro- and nanostructures on the tip of atomic force microscope probes, microcantilevers, transmission electron microscopy grids, and suspended single-walled carbon nanotubes Our results show that by using amorphous water ice as an e-beam resist, a new generation of nanodevice structures can be fabricated on nonplanar or fragile Determining the resolution limits of electron-beam lithography direct measurement of the point-spread functionZaluzec NJ, Miller DJ, Stach EA, Berggren KKOne challenge existing since the invention of electron-beam lithography EBL is understanding the exposure mechanisms that limit the resolution of EBL
 
  To overcome this challenge, we need to understand the spatial distribution of energy density deposited in the resist, that is, the point-spread function PSF During EBL exposure, the processes of electron scattering, phonon, photon, plasmon, and electron emission in the resist are combined, which complicates the analysis of the EBL PSF Here, we show the measurement of delocalized energy transfer in EBL exposure by using chromatic aberration-corrected energy-filtered transmission electron microscopy EFTEM at the sub-10 nm scale We have defined the role of spot size, electron scattering, secondary electrons, and volume plasmons in the lithographic PSF by performing EFTEM, momentum-resolved electron energy loss spectroscopy EELS, sub-10 nm EBL, and Monte Carlo simulations We expect that these results will enable alternative ways to improve the resolution limit of EBL Furthermore, our approach to study the resolution limits of EBL may be applied to other lithographic techniques where electrons also play a key role in resist exposure, such as ion-beam-, X-ray-, and extreme-ultraviolet lithographyHigh-Precision and Rapid Direct Laser Writing Using a Liquid Two-Photon Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P
 
  R Department of Polymer Science and Engineering, Zhejiang University, Hangzhou Two-photon polymerization based direct laser writing DLW is an emerging micronano 3D fabrication technology wherein two-photon initiators TPIs are a key component in photoresists Upon exposure to a femtosecond laser, TPIs can trigger the polymerization reaction, leading to the solidification of photoresists In other words, TPIs directly determine the rate of polymerization, physicochemical properties of polymers, and even the photolithography feature size However, they generally exhibit extremely poor solubility in photoresist systems, severely inhibiting their application in DLW To break through this bottleneck, we propose a strategy to prepare TPIs as liquids via molecular design The maximum weight fraction of the as-prepared liquid TPI in photoresist significantly increases to 2 wt , which is several times higher than that of commercial 7-diethylamino-3-thenoylcoumarin DETC
 
  Meanwhile, this liquid TPI also exhibits an excellent absorption cross section 64 GM, allowing it to absorb femtosecond laser efficiently and generate abundant active species to initiate polymerization Remarkably, the respective minimum feature sizes of line arrays and suspended lines are 47 and 20 nm, which are comparable to that of the-state-of-the-art electron beam lithography Besides, the liquid TPI can be utilized to fabricate various high-quality 3D microstructures and manufacture large-area 2D devices at a considerable writing speed 145 m s-1 Therefore, the liquid TPI would be one of the promising initiators for micronano fabrication technology and pave the way for future Study of a chemically amplified resist for X-ray lithography by Fourier Technological University, 1 Nanyang Walk, Singapore 637616Future applications of microelectromechanical systems MEMS require lithographic performance of very high aspect ratio Chemically amplified  http//allinnocom/news/166html  CARs such as the negative tone commercial SU-8 provide critical advantages in sensitivity, resolution, and process efficiency in deep ultraviolet, electron-beam, and X-ray lithographies XRLs, which result in a very high aspect ratio In this investigation, an SU-8 resist was characterized and optimized for X-ray lithographic applications by studying the cross-linking process of the resist under different conditions of resist thickness and X-ray exposure dose
 
  The exposure dose of soft X-ray SXR irradiation at the average weighted wavelength of 10 nm from a plasma focus device ranges from 100 to The cross-linking process of the resist during post-exposure bake PEB was accurately monitored using Fourier transform infrared FT-IR spectroscopy The infrared absorption peaks at 862, 914, 972, and 1128 cm-1 in the spectrum of the SU-8 resist were found to be useful indicators for the completion of cross-linking in the resist